| PART |
Description |
Maker |
| IRFS4127PBF IRFSL4127PBF IRFS4127TRLPBF IRFS4127PB |
HEXFET Power MOSFET
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| IRFB4310GPBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF540PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRFH6200PBF |
HEXFETPower MOSFET
|
International Rectifier
|
| IRF6620 IRF6618TR1 |
HEXFETPower MOSFET HEXFETPower MOSFET
|
Microchip Technology, Inc.
IRF[International Rectifier]
|
| IRFB4127PBF |
HEXFETPower MOSFET
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
|
| SCH2815 |
MOSFET : N-Channel Silicon MOSFET MOSFET General-Purpose Switching Device
|
Sanyo Semicon Device
|
| IRFU3709 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 90A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 90A型（丁）|51AA
HEXFET? Power MOSFET
SMPS MOSFET
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| BR211-280 BR211 BR211-140 BR211-160 BR211-180 BR21 |
Breakover diodes 314 V, SYMMETRICAL BOD
MOSFET N-CH 500V 3A TO-220
MOSFET N-CH 600V 2A TO-220
MOSFET N-CH 1.2KV 3A TO-220AB
MOSFET N-CH 500V 1A TO-220
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| DF1-PD2428SCFB DF1B-10S-2.5R DF1B-11S-2.5R DF1B-12 |
MOSFET N-CH 600V 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 24A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 1KV 36A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 44A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
MOSFET N-CH 500V 80A SOT-227B 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
2.5mm Pitch Connector for Discrete Wire Connection (Product Compliant with UL/CSA Standard) 2.5毫米间距连接器的离散线连接与UL（产品符 CSA标准
CAT6 SOL PC PVC BLU 50FT PVC SOLID PATCH CORD
MOSFET N-CH 500V 48A SOT-227B
MOSFET N-CH 200V 180A SOT-227B
MOSFET N-CH 300V 130A SOT-227B
MOSFET N-CH 500V 64A SOT-227
MOSFET N-CH 70V 200A SOT-227B
|
http://
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| VRF148A VRF148AMP VRF148A10 |
RF MOSFET (VDMOS) for 50V operation; P(out) (W): 30; P(in) (W): 1; Gain (dB): 15; VDD (V): 50; Coss (pF): 35; Case Style: M113 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF POWER VERTICAL MOSFET
|
Microsemi, Corp.
Microsemi Corporation
|
